Investigation of compensation defects in CdTe:Cl samples grown by different techniques

A detailed analysis of the photoinduced current transients of differently grown CdTe:Cl samples was performed in the 100–140 K range in order to investigate the influence of different growth techniques (sublimation, Bridgman method, and traveling heater method) on compensation defects. While studying the experimental results the analysis of the transients turned out to be a crucial point. With the conventional two-gate technique only one trap with misleading trap parameters could be identified in each sample. Analyzing the transients with the regularization method proposed recently [C. Eiche, D. Maier, M. Schneider, D. Sinerius, J. Weese, K. W. Benz, and J. Honerkamp, J. Phys. Condens. Matter 4, 6131 (1992)], three traps could be identified in each sample. Only one of these traps leads to an activation energy and a cross section approximately the same for the different samples. The other two traps of each sample depend on the growth technique.