Experimental study resolves compressible and incompressible edge strips in a two-dimensional electron system, indicating consistency with bulk Landau-level filling.
We map out compressible and incompressible strips in the depletion region of a two-dimensional electron system (2DES) in the quantum Hall regime by using a metal single-electron transistor (SET) fabricated on top of a GaAs/AlGaAs heterostructure containing the 2DES. Applying a voltage to a gate electrode at 0.9μm from the SET island shifts the edge of the 2DES closer to the SET island. Different edge strips are clearly resolved by monitoring the fluctuations in the current through the SET. The number of these is consistent with the value of the bulk Landau-level filling factor.
No takes yet. Share an insight, caveat, or question.
Wei et al. (1998) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: