Bimetallic oxide nanoparticles CoxMoyO as charge trapping layer for nonvolatile memory device applications

The reduced CoxMoyO bimetallic oxide nanoparticles (BONs) embedded in the hafnium oxynitride high-k dielectric have been developed by means of the chemical vapor deposition method. Capacitance-voltage (C-V) measurements estimate that a charge trap states density of 1.1×1012cm−2 and a flatband voltage shift of 700mV were achieved during the C-V hysteresis sweep at ±5V. Scanning electron microscopy image displays that the CoxMoyO BONs with a diameter of ∼4–20nm and a surface density of ∼1×1011cm−2 were obtained. The writing characteristics measurements illustrate that the memory effect is mainly due to the holes trapping.