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Si(001) 2×1 domain conversions induced by sample electric current are observed using microprobe reflection high-energy electron diffraction. Samples are heated by using both direct current and a radiative heater. It is found that diffusion anisotropy of Si adatoms exists on 2×1 surfaces and that the domain conversion velocity is proportional to a voltage applied between the sample edges. This indicates that the conversion process is induced by the diffusion anisotropy and the electric force acting on positively charged adatoms. Minor 2×1 domain terraces always spread when the sample is heated radiatively. This preserves narrow 2×1 and 1×2 domain terraces after the conversion process and during Si growth process.
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Ichikawa et al. (1992) studied this question.
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