Diffusion Constants of Si Adsorbates on a Si(001) Surface

The thermal diffusion of Si adsorbates deposited on a Si(001) clean surface was investigated using reflection electron microscopy. When the Si sample was heated using direct current, denuded zones with no observable Si islands were created at the terrace edges of the surface. From the denuded zone widths, the diffusion constants of the Si adsorbates on the Si(001) surface parallel and perpendicular to the surface dimer were determined for temperatures from 500° C to 850° C.