Reduction of GaAs metal–semiconductor field effect transistor sidegating by ultraviolet/ozone cleanup prior to molecular-beam epitaxial growth

This work demonstrates that UV-ozone cleaning of substrates prior to molecular-beam epitaxial growth, which has been shown by other workers to remove carbon contamination, is effective in suppressing sidegating problems otherwise encountered in GaAs metal–semiconductor field effect transistors fabricated on the epitaxial layers.