Epitaxially grown self-assembled InAs-InGaAs-GaAs quantum dots (QDs) are exploited for the development of large-format long-wavelength infrared focal plane arrays (FPAs). The dot-in-a-well (DWELL) structures were experimentally shown to absorb both 45deg and normal incident light, therefore, a reflection grating structure was used to enhance the quantum efficiency. The devices exhibit peak responsivity out to 8.1 mum, with peak detectivity reaching ~1times1010Jones at 77 K. The devices were fabricated into the first long-wavelength 640times512 pixel QD infrared photodetector imaging FPA, which has produced excellent infrared imagery with noise equivalent temperature difference of 40 mK at 60-K operating temperature
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Gunapala et al. (2007) studied this question.
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