InGaN–GaN Nanorod Light Emitting Arrays Fabricated by Silica Nanomasks

We present a practical process to fabricate InGaN-GaN multiple quantum well nanorod structures. By using silica nanoparticles as the etch mask and followed by dry etching, nanorods with diameter 100 nm can be uniformly fabricated over the entire 2-in wafer. The photoluminescence spectra of the InGaN-GaN p-i-n nanorod structure are extracted at room and low temperatures. Also, discrete density of states can be observed at the temperature below 60 K. We further fabricate nanorod light emitting devices using a planarization approach to deposit p-type electrode on the tips of nanorods. Current-voltage curves and electroluminescent results of nanorod light emitting diode arrays are demonstrated.