Temperature dependence of electronic behaviors in n-type multiple-channel junctionless transistors

The electronic behaviors in the n-type multiple-channel junctionless nanowire transistors are investigated in the thermal range from 10 K to 300 K. At low temperatures (T < 100 K), oscillation current spikes are clearly observed below flatband voltage and attributed to resonant tunneling through donor-induced quantum dot array. There is a minimum value at the critical temperature of 15 K for the drain currents and the electron mobility. The electron mobility increases rapidly above 15 K because of the thermal activation of ionized electrons. The temperature-dependent background trapping at the interface of silicon and silicon dioxide is evaluated by an Arrhenius-type off-state current with the activation energy of approximately 49 meV. As temperatures increasing, the negative shift of the threshold voltage with the slope of 4.0 mV K−1 is given predominantly by the thermal activation of traps.