Calculation of Nonradiative Multiphonon Capture Coefficients and Ionization Rates for Neutral Centres According to the Static Coupling Scheme II. Alternative Trap Models

On the basis of the static coupling scheme, explicit calculations are performed of nonradiative multiphonon capture coefficients for one‐band‐model traps in a direct semiconductor. The present investigations are more comprehensive than earlier ones in the following respects: 1) the interaction of the trapped carrier with both the longitudinal acoustic and the longitudinal optical crystal modes is taken into consideration, 2) comparable analytical results are derived for the alternative models of a delta‐function potential (isoelectronic traps) and a Coulombic potential (hydrogenic traps), 3) a comparison is made between the one‐ and two‐parameter descriptions of such traps, and 4) explicit results are given both for pseudo‐intraband and ‐interband processes.