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Ln (Er, Eu, Tb, Yb)-doped lead zirconate titanate [Pb1.1(Zr0.6Ti0.4)O3; PZT] thin films on Pt/Ti/SiO2/Si substrates prepared by a sol-gel method. Films have a Zr/Ti ratio of 60/40 and perovskite phase polycrystalline structure. The effect on the structural and electrical properties of films was measured according to additive compound. Dielectric and ferroelectric properties of PZT thin films were altered significantly by Ln-doping. A PZT thin film with higher dielectric constant and improved leakage current characteristic was obtained by adding 0.3 mol % of Ln. Ln-doped PZT thin films showed improved fatigue characteristics compared to the undoped PZT thin film.
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Son et al. (2004) studied this question.
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