Lattice-matched distributed Bragg reflectors for nitride-based vertical cavity surface emitting lasers

Very narrow spontaneous emission (Δλ∼0.5 nm), corresponding to a quality factor Q in excess of 800, has been obtained under continuous-wave excitation at room temperature with an AlInN/GaN monolithic microcavity. The structure is made of thin InxGa1−xN/GaN (x=0.15) multiple quantum wells inserted in a GaN 3λ/2 (λ=420 nm) cavity surrounded by lattice-matched AlInN/GaN distributed Bragg reflectors.