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June 26, 2004Applied Physics Letters

Epitaxial GaN on Si(111): Process control of SiNx interlayer formation

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TRT. A. RawdanowiczNorth Carolina State UniversityJNJ. NarayanNorth Carolina State University

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Rawdanowicz et al. (2004) studied this question.

synapsesocial.com/papers/6a9e4afa74bfeee0946aad3ehttps://doi.org/10.1063/1.1771803
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  1. 1Thermal nitridation of the Si(111)-(7×7) surface studied by scanning tunneling microscopy and spectroscopy2002 · 34 citations
  2. 2GaN heteroepitaxial growth on silicon nitride buffer layers formed on Si (111) surfaces by plasma-assisted molecular beam epitaxy1998 · 152 citations
  3. 3GaN, AlN, and InN: A review1992 · 2,822 citations
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