Scanning electron beam annealing with a modified SEM

A commercial scanning electron microscope, modified for high current operation, has been successfully used to anneal arsenic implanted silicon. The measured parameters of the electron–beam are shown to fit a model for localized heating, taking into account source-dispersal due to beam penetration, and to explain the experimentally observed window for annealing without melting. Recrystallization of the annealed layers is shown by the sharp electron-channeling patterns obtained. Spreading-resistance and junction depth measurements indicate complete electrical activation of the implanted species without any measurable redistribution. The potential for localized annealing through a finely focused scanning electron–beam is illustrated by the fabrication of conducting region of submicron dimensions surrounded by high resistivity amorphous silicon.