Low temperature and selective growth of β-SiC using the SiH2Cl2/i-C4H10/HCl/H2 gas system

β-SiC is grown on a silicon substrate by the chemical vapor deposition method using the SiH2Cl2/i-C4H10/H2/HCl gas system. Stoichiometric β-SiC films are obtained with high growth rate at a low temperature of 900 °C. Highly (111) oriented β-SiC polycrystal is grown on a Si(111) substrate. Moreover, using the above-mentioned gas system, β-SiC selective growth is attained on a Si substrate, with no nucleation on the SiO2 area. This letter discusses the i-C4H10 effects and selective growth condition.