Synthesis of ZnO Thin Films by Metal-Organic CVD of Zn(CH3COO)2

Zinc oxide films were deposited by CVD in air and nitrogen under atmospheric conditions using zinc acetate and zinc oxyacetate as the precursors. Factors for obtaining reproducible depositions were identified. The activation energies using zinc acetate as the precursor were ∼ 45 kJ mol–1 (±20%) both in air and in nitrogen, and ∼ 45 kJ mol–1 (±20%) in air, using zinc oxyacetate as the precursor. The concentration dependence of the deposition rate was ≤ 1/3. Crystalline films with lower carbon content were deposited at lower substrate temperatures under atmospheric conditions than at reduced pressures. Water enhanced the (002) orientation of the films and increased the deposition rate only in nitrogen (not in air). Overall, this study provides the first quantitative information about the kinetics of the deposition of ZnO from zinc acetate and zinc oxyacetate.