InGaN/GaN laser diodes on semipolar (101 1$) bulk GaN substrates

The first semipolar nitride laser diodes (LDs) have been realized on low extended defect density semipolar (101 1 ) GaN bulk substrates. The LDs were grown by conventional metal organic chemical vapor deposition (MOCVD). Broad area lasers with uncoated etched facets were fabricated and tested under pulsed conditions. Lasing was observed at a duty cycle of 0.025% with the threshold current density (Jth) being 24.5 kA/cm2 for a 5 µm × 800 µm device. An output power of 65 mW was measured from a single facet of the device at a drive current of 1.5 A, with the calculated differential quantum efficiency (ηdiff) being 8%. Stimulated emission was observed at 405.9 nm with a narrow full width half maximum (FWHM) of less than 0.3 nm. The lowest measured Jth was 16.5 kA/cm2 for a 10 µm × 800 µm device. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)