GaAs-based singlemode emission at 1.5 µm has been realised for the first time in continuous-wave operation. GaInNAsSb active-layer material and GaAsN strain-compensating barriers have been used in combination with lateral distributed feedback. Laser diodes with a threshold current of 95 mA, an external efficiency of 0.15 W/A and a maximum output power of more than 10 mW could be demonstrated. A sidemode suppression ratio better than 31 dB could be realised at a singlemode emission wavelength of 1496 nm.
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Gollub et al. (2004) studied this question.
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