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September 1, 1991Semiconductor Science and Technology

Excitation mechanisms of rare earth (Yb) luminescence in III-V semiconductors (InP)

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Authors

CLChristophe LhomerPlastic Omnium (France)BLB. LambertAT&T (United States)YTY. ToudicCentre Hospitalier Lannion Trestel

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Lhomer et al. (1991) studied this question.

synapsesocial.com/papers/6a9e7d12e2d0fc9581be6d10https://doi.org/10.1088/0268-1242/6/9/014
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Isoelectronic impurities in semiconductors: a survey of binding mechanisms1971 · 59 citations
  2. 2Photoluminescence excitation spectroscopy on InP: Yb1984 · 26 citations
  3. 3Electrical properties of ytterbium-doped InP grown by metalorganic chemical vapor deposition1988 · 106 citations
  4. 4Excitation and decay mechanisms of the intra-4f luminescence of Yb3+ in epitaxial InP:Yb layers1988 · 66 citations
  5. 5Isoelectronic impurity states in direct-gap III-V compounds: The case of InP: Bi1978 · 40 citations