We observed electrical switching phenomena in a phase change material (Ge 2 Sb 2 Te 5 ) in contact with metallic nanowires of 100 nmφ, which were embedded in a track-etched polycarbonate membrane by electroplating. While the electrical resistance of the system did not change when applied voltage was 0–1 V, switching occurred from a high-resistance state (HS) to a low-resistance state (LS) when voltage was increased from 0 V to 5 V and then decreased to 0 V. The maximum current was 100 nA. LS was 10 times more conductive than HS. A reset operation from LS to HS was realized using a 20 ns pulse of 5 V. Switchings from HS to LS and from LS to HS were confirmed several times, demonstrating that the device is rewriteable.
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Tanaka et al. (2002) studied this question.