Three dimensional modeling of silicon deposition process scale-up employing supersonic jets. II

A new technique to deposit silicon thin film employing supersonic beams is examined. Our previous studies involved both experimental and numerical approaches, in which the thin films were deposited at a high growth rate but over relatively small areas. The current studies are focused on the process scale-up by using multiple supersonic jets. Three dimensional simulations are conducted to investigate the geometrical effects of the molecular beam sources. One source configuration involving four jets is found to successfully deposit uniform silicon films over an area of 18 cm in diameter, with a growth rate higher than 200 Å/min. The molecular beam energy obtained under these conditions is approximately 1.3 eV. A configuration is also designed to increase the deposition area in a laboratory facility for experimental verification.