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An up-date is presented on the use of ferroelectric thin films for the active memory element in nonvolatile random access memories (FRAMs) and as passive capacitors in dynamic random access memories (DRAMs). Emphasis is placed on device physics problems, including optimum choice of ferroelectric materials, electroding, leakage current, breakdown, fatigue, and scaling to submicron cell size.
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Scott et al. (1997) studied this question.
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