We report the epitaxial growth of multiferroic BiFeO3 (BFO) film on Si(001) substrate by pulsed laser deposition using CeO2/yttria-stabilized zirconia (YSZ) as buffer layers. The epitaxial relationships of the films were BFO(001)/CeO2(001)/YSZ(001)/Si(001) for out-of-plane and [110]BFO‖[100]CeO2‖[100]YSZ‖[100]Si for in-plane, respectively. Capacitance-voltage characteristics of a Pt/BFO/CeO2/YSZ/p-Si capacitor exhibited clockwise hysteresis loops with a large memory window of 2.5 V at sweeping voltages of ±16 V. Both the high and low capacitance values showed no obvious degradation after 104 s. The improved retention property was attributed to the use of high-k CeO2/YSZ insulating layers that effectively eliminated the charge trapping in the heterostructure.
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Hu et al. (2012) studied this question.
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