Metal-ferroelectric-insulator-semiconductor structures with a BiFeO3 ferroelectric layer and DyScO3 insulating buffer layer were fabricated and characterized. BiFeO3 film was polycrystalline with rhombohedral structure and DyScO3 film was amorphous. The size of the capacitance-voltage memory window (ΔVFB) was investigated as a function of voltage sweep and frequency; ΔVFB increased to a saturation value of 1.7 V with the sweep voltage and it almost remained constant over a frequency range of 1 kHz to 1 MHz.
No takes yet. Share an insight, caveat, or question.
Murari et al. (2009) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: