January 1, 2008Journal of The Electrochemical Society

Improvement on Reliability Properties of Metal-Ferroelectric (BiFeO[sub 3])-Insulator (HfO[sub 2])-Semiconductor Structures Fabricated by Oxygen-Incorporated Magnetron Sputtering

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Abstract

Improvement on Reliability Properties of Metal-Ferroelectric ( BiFeO3 ) -Insulator ( HfO2 ) -Semiconductor Structures Fabricated by Oxygen-Incorporated Magnetron Sputtering, Juan, Trevor Pi-chun, Lu, Jong-hong, Lu, Ming-wei

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Juan et al. (2008) studied this question.

synapsesocial.com/papers/6a9e97e1562e538ebd1925e8 https://doi.org/10.1149/1.2994630

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Improvement on Reliability Properties of Metal-Ferroelectric (BiFeO[sub 3])-Insulator (HfO[sub 2])-Semiconductor Structures Fabricated by Oxygen-Incorporated Magnetron Sputtering

Abstract

Discussion

Cite This Study

Improvement on Reliability Properties of Metal-Ferroelectric (BiFeO[sub 3])-Insulator (HfO[sub 2])-Semiconductor Structures Fabricated by Oxygen-Incorporated Magnetron Sputtering

Abstract

Discussion

Cite This Study

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