Electrical Properties of Amorphous Bi₅ Nb₃O₁₅ Thin Film for RF MIM Capacitors

Amorphous Bi5Nb3O15(B5N3) film grown at 300degC showed a high-kvalue of 71 at 100 kHz, and similarkvalue was observed at 0.5-5.0 GHz. The 80-nm-thick film exhibited a high capacitance density of 7.8 fF/mum2and a low dissipation factor of 0.95% at 100 kHz with a low leakage-current density of 1.23 nA/cm2at 1 V. The quadratic and linear voltage coefficient of capacitances of the B5N3film were 438 ppm/V2and 456 ppm/V, respectively, with a low temperature coefficient of capacitance of 309 ppm/degC at 100 kHz. These results confirmed the potential of the amorphous B5N3film as a good candidate material for a high-performance metal-insulator-metal capacitors.