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Ferroelectric properties of 9% mol (Hf,Zr)-doped BaTiO/sub 3/ ceramics have been studied by comparison with those of pure tetragonal BaTiO/sub 3/ ceramics. The addition of doping ions lead to a shift of the rhombohedral to orthorhombic and orthorhombic to tetragonal transition temperatures above 0/spl deg/C, and to a decrease of tetragonal to cubic (ferroelectric to paraelectric) transition temperature from 122/spl deg/C to 95/spl deg/C on heating and from 120/spl deg/C to 85/spl deg/C on cooling. In pure tetragonal ceramics at room temperature, aging develops by a thermally activated process, leading to a linear dependence of the relative permittivity and dielectric loss on the logarithm of time. In the case of doped ceramics, the experiments showed a decreasing reversed-S dependence of capacitance and tan /spl delta/ on the logarithm of time, suggesting that dielectric aging in these materials is related with defect diffusion. It was concluded that in doped BaTiO/sub 3/ ceramics the aging mechanisms depend on the crystalline symmetry, which influences the twinning process and the domain-wall dynamics. Aging of (Hf,Zr)-doped BaTiO/sub 3/ ceramics depends on temperature and the phase symmetry, which imposes the twinning rate and the rearrangement speed of ferroelectric domains minimizing the elastic energy of the lattice.
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Mitoşeriu et al. (2001) studied this question.
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