Room-temperature resonant tunnelling bipolar transistor XNOR and XOR integrated circuits

The first resonant tunnelling bipolar transistor integrated circuits operating at room temperature are demonstrated. The circuits are composed of cointegrated resonant tunnelling bipolar transistors and double heterojunction bipolar transistors based on InP substrates. Both a three-transistor XNOR and a seven-transistor XOR logic gate have been demonstrated using a 3 V power supply.