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Design and evaluation of a novel high speed low power static RAM cell in AlGaAs/GaAs quantum well technology is presented. A current sense amplifier to accompany this cell is also proposed. Simulation results show an access time of 700 ps with standby and active currents of 14 µA/bit and 0.29 mA/bit, respectively. The cell area is found to be comparable to that of the corresponding full DCFL cell.
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Bushehri et al. (1995) studied this question.
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