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The characteristics of erbium implants in a silicon-on-insulator structure were studied by photoluminescence and electrical activation measurements. The results indicate that a correlation exists between the luminescence energy or the lattice configuration and the electrical activation of the erbium in the implanted materials. Meanwhile, this work suggests a new way to enhance the luminescence efficiency of the erbium implanted materials.
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Tang et al. (1990) studied this question.
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