Current status and prospects of mfsfets and related devices

Novel applications of MFSFET (metal-ferroelectric-semiconductor field effect transistor) arrays to single-transistor-cell-type digital memories and to analog memories for storing the synaptic weight in artificial neural networks are first discussed. In these arrays, a ferroelectric film is sandwiched with Si stripes which are formed with npn regions on an insulating substrate, and metal stripes placed perpendicular to the Si stripes, and MFSFETs are formed at the cross points of both stripes. It is emphasized that the packing density of FETs is very high, since no via-hole exists in the array area. Then, recent progress of MFSFETs and related devices is reviewed, which includes PZT/Ir/IrO2/poly-Si/SiO2/Si, PZT/CeO2/Si, PZT/SrTiO3/Si,SrBi2Ta2O9/SiO2/Si,BaMgF4/Si, BaMgF4/Pt/SiO2/Si, and so on.