High-Mobility Solution-Processed Amorphous Indium Zinc Oxide/In₂O₃ Nanocrystal Hybrid Thin-Film Transistor

High-performance thin-film transistors with amorphous indium zinc oxide (IZO) films was deposited by embedding indium oxide nanocrystals (In2O3NCs) into IZO films based on a sol-gel process. Excellent electrical properties have been demonstrated, including a field-effect mobility value of 32.6 cm2·V-1·s-1and an on-off ratio of 107, which were obtained at 1 mol% In2O3NCs in amorphous IZO films. Our findings demonstrate the feasibility of low-temperature sol-gel-based oxide semiconductor transistors, which is more cost-effective compared with conventional fabrication techniques but with comparable performance.