Epitaxial gallium arsenide p-n junctions have been prepared using close-spaced vapor transport to grow an n-type layer on a p+ substrate. The diodes obtained show two well-defined conduction mechanisms. Using deep level transient spectroscopy a level located at E c–E t=0.74 eV having a concentration around 1014 cm-3 has been detected in the n region. Forward biased diodes show room temperature electroluminescence peaking at 1.4 eV.
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Mimila‐Arroyo et al. (1990) studied this question.
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