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A GaAs/AlGaAs double-heterojunction bipolar transistor (DHBT) is developed which also functions as a transverse-injection laser. The epitaxial layers for the DHBT's are grown by metalorganic vapor phase epitaxy (MOVPE). Experimentation reveals a transistor current gain of ∼ 10 and a pulsed lasing threshold of 230 mA at room temperature.
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Hasumi et al. (1987) studied this question.
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