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Two aspects of the material property modifications of the GaAs/AlGaAs system induced by Ga focused ion beam implantation have been studied. One is the formation of a highly resistive region in an n-type GaAs layer, and the other is the enhanced interdiffusion of GaAs/AlGaAs heterointerfaces. Both modifications enable us to change material properties with a minimum dimension of <100 nm. Quantum-well-wire structures were successfully fabricated by using the latter technique.
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Hirayama et al. (1988) studied this question.
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