The magnetoelectric (ME) properties of Tb0.3Dy0.7Fe1.92(Terfenol-D)/PbZr0.3Ti0.7O3(PZT) thin films grown on a Pt(111)/Ti/SiO2/Si(100) substrate were investigated. The ferroelectric behavior of a Terfenol-D/PZT bilayer film stack was examined by polarization–electric field hysteresis measurement. The remnant polarization (Pr) and coercive field (Ec) values were found as 31 µC/cm2and 124 kV/cm, respectively. The magnetic behavior was observed using a vibration sample magnetometer (VSM) at 300 K with saturation magnetization (Ms) and coercivity (Hc) values of 6.7 emu/cm3and 70 Oe, respectively. The application of magnetic field caused a piezomagnetic strain in the Terfenol-D layer hence, the piezoelectric voltage or charge in the PZT thin film was induced. The maximum magnetoelectric voltage coefficient (dE/dH) value of approximately 40 mV cm-1Oe-1was obtained at the magnetic field of 5 kOe.
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Yoon et al. (2012) studied this question.
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