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Silicon nanoparticles synthesized using low-energy (35 keV) silver ion beam implantation in crystalline Si exhibit enhanced radiative recombination efficiency due to resonant coupling of localized surface plasmon polariton to the bound excitons confined at the nanoscale Si interface. A photoluminescence (PL) enhancement of more than 20 times is observed due to the local field effect induced by the metal nanoparticles at 250 K. At 15 K, fourfold enhancement in the radiative recombination rate is observed as the presence of the PL due to Ag ion implantation is 400 ps compared with 2.1 ns without the metal ions.
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Singh et al. (2010) studied this question.
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