InGaAs/InP heterojunction bipolar transistor grownby all-solid source molecular beam epitaxy

State-of-the-art InGaAs/InP heterojunction bipolar transistors were grown by all-solid source molecular beam epitaxy. Fabricated transistors showed cutoff frequencies of >100 GHz with an emitter area of 1.5 × 5 µm2. Together with recent studies, these results demonstrate that the valved cracker technique is a very competitive nontoxic growth method.