It was found, from combined measurements of the surface microroughness of silicon oxide film and the SiO2/Si interface structure, that the surface microroughness of thermal oxide film formed on a Si(111) surface changes periodically with the progress of oxidation in accordance with periodic changes in interface structures. Therefore, the changes in interface structures can be detected by measuring the oxidation-induced surface microroughness.
No takes yet. Share an insight, caveat, or question.
Ohashi et al. (1997) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: