Effect of Mechanical Stress on p—n Junction Device Characteristics. II. Generation—Recombination Current

A theoretical model is developed for the effects of stress on generation—recombination currents in p—n junctions. The model is based on stress-induced changes in the energy band structure of the semiconductor and energy changes of the generation—recombination centers. Experimental data taken on silicon mesa diodes are presented which are in good agreement with the theory.