Uniaxial stress effect on germanium backward diodes has been studied. Stress-induced increase in forward current (I f ) with constant slope of ln I f vs V plots are explained by the model of Wortman et al. Band gap change with stress σ, d E g /dσ, is evaluated as 7.5×10-12 eV cm2/dyn. Stress-induced decrease in tunneling reverse current is interpreted on the basis of model that the effect of stress-induced decrease in tunneling carrier concentration exceeds that of increase in tunneling probability.
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Imai et al. (1965) studied this question.
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