30 GHz static frequency divider using a0.2 µm AlGaAs/GaAs/AlGaAs HEMT technology

A frequency divider chip based on AlGaAs/GaAs/AlGaAs quantum well FETs with 0.2 µm gate length has been developed and fabricated. The divider can be operated up to 30 GHz with a single-ended input signal at an input resistance of 50 Ω. The output signals are differential with both internal load resistances at 50 Ω.