High-mobility transparent thin-film transistors with an Sb-doped SnO2nanocrystal channel fabricated at room temperature

Transparent thin-film transistors with bottom-gate figure are fabricated by sputter deposition of an Sb-doped SnO2 nanocrystal channel layer onto glass substrates at room temperature with plasma-enhanced chemical vapor deposition SiO2 gate dielectrics and sputtering ITO electrodes. These devices exhibit high-performance n-type transistor characteristics operating in depletion mode with an ultrahigh field-effect mobility of 158 cm(2) V(-1) s(-1). The current on/off ratio and the subthreshold swing are found to be 3 x 10(4) and 0.2 V/decade, respectively. These achievements demonstrate that SnO2-based nanocrystal thin-film transistors are promising for high-speed transparent and flexible electronics on temperature-sensitive substrates.