Post-growth annealing of low temperature-grown Sb-doped Si molecular beam epitaxial films

Sb-doped Si films have been grown on (100) Si substrates at low temperature (∼350 °C) by molecular beam epitaxy. Through coevaporation with Sb, very high doping efficiencies were achieved over a carrier concentration range of 1×1017 to 1×1020 cm−3. Through calibration of the beam flux we found that the incorporation of Sb was very near unity up to a concentration of ∼5×1019 cm−3. As-grown films are of good quality. However, furnace annealing was shown to improve the mobility and completely activate the Sb. Temperature dependent Hall measurements were used to further characterize the films.