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Electron–longitudinal optical phonon scattering rate in InN has been directly measured by subpicosecond time-resolved Raman spectroscopy. The experimental results show that for a thick layer of InN grown on GaN, the average total electron–longitudinal optical phonon scattering rate is (5.1±1.0)×1013s−1. This enormous electron–longitudinal optical phonon scattering rate, which is comparable to that observed in GaN, has been attributed to the extremely polar nature of InN.
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Tsen et al. (2007) studied this question.
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