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May 1, 1990Journal of Applied PhysicsOpen Access

Photoreflectance measurements on Si δ-doped GaAs samples grown by molecular-beam epitaxy

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ABAyrton BernussiTexas Tech UniversityFIF. IikawaUniversidade Estadual de Campinas (UNICAMP)PMP. MotisukeNational Institute for Space Research

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Bernussi et al. (1990) studied this question.

synapsesocial.com/papers/6a9f5a2e81f49d3feb107ce2https://doi.org/10.1063/1.344976
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  1. 1Schottky-Barrier Electroreflectance: Application to GaAs1973 · 592 citations
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  3. 3Charge control of the heterojunction two-dimensional electron gas for MESFET application1981 · 43 citations