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Schottky diodes with iridium (Ir) contact electrodes on ZnO films were fabricated and characterized in this work. The Schottky barrier height between Ir and ZnO was determined to be 0.824 ± 0.04%, 0.837 ± 0.04% and 0.924 ± 0.04% eV by the thermionic emission model, the Norde model and capacitance–voltage measurement, respectively. It was also found that the ideality factor of the fabricated ZnO-based Schottky diode was 1.68.
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Young et al. (2008) studied this question.
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