Highly Reflective and Low Resistance Indium Tin Oxide/Ag Ohmic Contacts to p-Type GaN for Flip-Chip Light Emitting Diodes

We report on the formation of high-quality Ag contacts to by using indium-tin oxide (ITO) interlayers. The contacts give specific contact resistances of when annealed at for in air. The reflectance of the is measured to be 85% at , which is much better than that of the and the single Ag contacts. Light-emitting diodes fabricated with the contact gives much higher output power than those with the and single-Ag reflective contacts.