Ortho ‐nitrobenzyl cholate esters have been successfully used as photosensitive components in solution inhibition deep UV photoresists. The photochemical behavior of a variety of substituted o ‐nitrobenzyl cholate derivaties has been examined and resist sensitivity is related to the quantum yield of the reaction. The most efficient system examined is o , o ′‐dinitrobenzyl cholate/P(MMA‐MMA), where the quantum yield of photoreaction is 0.2 and resist sensitivity is ca. 150 mJ/cm 2 for a 1.5 μm film. The mode of resist behaviour on irradiation and development is also reported.
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Reichmanis et al. (1983) studied this question.
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