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March 17, 1997Applied Physics Letters

Layer splitting process in hydrogen-implanted Si, Ge, SiC, and diamond substrates

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QTQiaoling TongNingbo UniversityKGKarsten GutjahrGlobalFoundries (United States)SHS. HopfeMax Planck Society

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Tong et al. (1997) studied this question.

synapsesocial.com/papers/6a9faa673579a0ffc99c9446https://doi.org/10.1063/1.118586
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